EPC Releases Two New White Papers on GaN Power Conversion for AI Data Centers and Advanced Motor Drives

New technical papers examine 800 VDC power delivery for AI infrastructure, integrated 100 V GaN power stages for robotics, drones, and precision motion control

EL SEGUNDO, CA, UNITED STATES, September 14, 2026 /EINPresswire.com/ -- Efficient Power Conversion (EPC), a leader in enhancement-mode gallium nitride (eGaN^®) power devices, today announced the publication of two new technical white papers addressing critical power-conversion challenges in two rapidly evolving markets: AI data centers and high-performance multi-axis motor drives.

The first white paper, “GaN-Based Power Delivery in AI Data Centers: High-Density Power Conversion Architectures from 800 VDC to Point-of-Load,” examines the transition toward 800 VDC distribution as AI racks move from tens of kilowatts toward hundreds of kilowatts and megawatt-scale compute clusters. At 800 VDC, a 200 kW rack requires only one-sixteenth of the current of a 48 V distribution bus, reducing conductor size, I²R losses, and cooling requirements.

The paper explores three architectures for converting 800 VDC to 50 V, 12.5 V, and 6.25 V rails, with particular focus on modular Input-Series, Output-Parallel (ISOP) LLC converters. By dividing the high-voltage input among multiple modules, the architecture enables low-voltage GaN FETs with a better Figure of Merit, when compared to higher-voltage devices, to perform high-ratio conversion at high switching frequencies.

Practical results demonstrate the performance potential: an 800 V-to-50 V implementation reaches 98.6% peak efficiency, while the EPC91123 800 V-to-12.5 V converter achieves 98.2% peak efficiency in an 8 mm profile. A 6 kW 800 V-to-6.25 V architecture reaches 98% peak and 97% full-load efficiency.
“As GPU power continues to increase, power conversion must move closer to the processor while minimizing conversion stages,” said Jason Zhang, Vice President of DC-DC Marketing and System Engineering at EPC. “Gen 7 GaN combined with modular ISOP architectures provides a practical path from an 800 VDC backbone to the very low bus voltages and extremely high currents required by next-generation AI processors.”

The second white paper, “From Device to Platform: EPC23108/09/10/11 100 V Integrated GaN Power Stages Simplify Multi-Axis Motor Drive Design,” addresses the increasing complexity of motor drives used in humanoid robots, drones, surgical robotics, and precision-motion systems.

EPC’s EPC231xx family integrates high- and low-side eGaN FETs, gate drive, level shifting, control interface, and protection functions into a monolithic GaN 100 V ePower™ Stage IC. The accompanying EPC91128–EPC91131 three-phase BLDC/PMSM inverter platforms give engineers a complete environment to evaluate current capability, sensing, protection, thermal performance, and different PWM interfaces.

The platforms operate across a recommended 14–80 V range (48 V typical) and support switching frequencies from 20 to 150 kHz. Complementary PWM versions maximize control flexibility, while single-PWM-input-pin versions reduce control-line count and wiring complexity—an increasingly important advantage as robotic systems scale to dozens of motors.

“In multi-axis robotics, power density is only part of the challenge,” said Marco Palma, Vice President Motor Drive Marketing and System Engineering at EPC. “Integration must also simplify control, protection, sensing, thermal management, and wiring. The EPC231xx family and its evaluation platforms give engineers a validated starting point that can be replicated efficiently across many motor axes.”

Together, the two white papers demonstrate how GaN is moving beyond component-level performance to enable complete power architectures - from multi-kilowatt AI infrastructure to compact, highly integrated motor drives.

Download the white papers, available in English and Chinese:

• WP019 - From Device to Platform: EPC23108/109/110/11 100 V Integrated GaN Power Stages Simplify Multi-Axis Motor Drive Design
• WP020 - GaN-Based Power Delivery in AI Data Centers: High-Density Power Conversion Architectures from 800 VDC to Point-of-Load

About EPC
EPC is the leader in enhancement mode gallium nitride (eGaN^®) based power management. Founded in 2007 by experts in power electronics, semiconductors, and business management, the company leverages cutting-edge technology to advance the field of power electronics through the development and commercialization of GaN-based power devices. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and satellites.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Press contact: Efficient Power Conversion: Maurizio Di Paolo Emilio tel: +39 3381426036 email: maurizio.dipaoloemilio@epc-co.com

Maurizio Di Paolo Emilio
Efficient Power Conversion
maurizio.dipaoloemilio@epc-co.com
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